Structural Characterization of Atomically Thin Hexagonal Boron Nitride via Raman Spectroscopy Thesis
نویسندگان
چکیده
A non-destruction evaluation of atomically thin hexagonal boron nitride (h-BN) films is critical to the U.S. Air Force and Department of Defense initiatives pursuing graphene-based electronic field effect transistors (FETs) capable of operating at terahertz frequencies. H-BN thin films an increase to the characteristic E2g 1367cm -1 h-BN peak intensity has been correlated to an increase in film thickness. Raman spectroscopy on a h-BN film with thicknesses of 7, 14, and 21 atoms (2.5nm, 5nm, 7.5nm respectively) revealed a linear relationship between peak intensity and thickness. This relationship can mathematically be described as and fits the data with a R value of 0.9986. There was no observed correlation between film thickness and full width at half maximum (FWHM) and there was no measured shift to the E2g peak with increasing film thickness.
منابع مشابه
Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition.
Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers....
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